creat by art ? silicon zener diodes ? low profile surface-mount package ? zener and surge current specification ? low leakage current ? excellent stability xx = specific device code g = green compound y = year ww = work week maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. symbol unit v f volts r ja /w r jl /w t j , t stg thermal resistance junction to lead 30 note 1: mounted on cu-pad size 5mm x 5mm ( R 40um thick) note 2: t j =25 prior to surge value dimensions in inches and (millimeters) power dissipation at tl=80 ta=25 (note 1) ptot 2.3 1.0 watts ? packaging method: refer to package code ? terminals: pure tin plated, lead free ? weight: 0.0196 gram forward voltage @ i f =0.2a bzd27c series marking diagram sub sma 1.0 watts voltage regulator diodes ? case: sub sma plastic features mechanical data ? high temperature soldering guaranteed: 260 / 10 seconds/ .375", (9.5mm) lead length ? green compound with suffix "g" on packing code & prefix "g" on datecode ? marking code: as table type number operating and storage temperature range -65 to +175 version:q11 1.2 non-repetitive peak pulse power dissipation 100us square pulse (note 2) thermal resistance junction to ambient air (note 1) 180 p zsm non-repetitive peak pulse power dissipation 10/1000us waveform (bzd27c11p to bzd27c100p) (note 2) p rsm 150 non-repetitive peak pulse power dissipation 10/1000us waveform (bzd27c110p to bzd27c220p) (note 2) p rsm 100 watts 300 watts watts pb rohs compliance rohs compliance
version:q11 ratings and characteristic curves (bzd27c series) fig.3 power dissipation vs ambient temperature 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 ambient temperature( o c) power dissipation(w) fig. 2 typ. diode capacitance vs reverse voltage 10 100 1000 10000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 reverse voltage typ. junction capacitance (pf) c12p c27p c200p fig. 1 typical forward characteristics 0.1 1 10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 forward voltage (v) instantaneous forward current (a) typ. vf max. vf fig. 4 maximum pulse power disspation vs zener voltage 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 175 200 225 250 zener voltage (v) max pulse power dissipation (w)
test current i zt i r v r ma ua v min. max typ max. min. max max. bzd27c11p e2 10.4 11.6 4 7 0.05 0.10 50 4 8.2 bzd27c12p e3 11.4 12.7 4 7 0.05 0.10 50 3 9.1 bzd27c13p e4 12.4 14.1 5 10 0.05 0.10 50 2 10 bzd27c15p e5 13.8 15.6 5 10 0.05 0.10 25 1 11 bzd27c16p e6 15.3 17.1 6 15 0.06 0.11 25 1 12 bzd27c18p e7 16.8 19.1 6 15 0.06 0.11 25 1 13 bzd27c24p f0 22.8 25.6 7 15 0.06 0.11 25 1 18 bzd27c27p f1 25.1 28.9 7 15 0.06 0.11 25 1 20 bzd27c30p f2 28 32 8 15 0.06 0.11 25 1 22 bzd27c33p f3 31 35 8 15 0.06 0.11 25 1 24 bzd27c36p f4 34 38 21 40 0.06 0.11 10 1 27 bzd27c39p f5 37 41 21 40 0.06 0.11 10 1 30 bzd27c43p f6 40 46 24 45 0.07 0.12 10 1 33 bzd27c47p f7 44 50 24 45 0.07 0.12 10 1 36 BZD27C51P f8 48 54 25 60 0.07 0.12 10 1 39 bzd27c62p g0 58 66 25 80 0.08 0.13 10 1 47 bzd27c68p g1 64 72 25 80 0.08 0.13 10 1 51 bzd27c75p g2 70 79 30 100 0.08 0.13 10 1 56 bzd27c100p g5 94 106 60 200 0.09 0.13 4 1 75 bzd27c120p g7 114 127 150 300 0.09 0.13 4 1 91 bzd27c180p h1 168 191 280 450 0.09 0.13 4 1 130 bzd27c200p h2 188 212 350 750 0.09 0.13 4 1 150 bzd27c220p h3 208 233 430 900 0.09 0.13 4 1 160 notes: 1. pulse test: tp Q 5ms. version:q11 reverse current@ reverse voltage alph z @ i z ? temperature coefficient %/ electrical characteristics (ta=25 unless otherwise noted) device device marking code working voltage (note 1) v z @ i zt v differential resistance r dif @ i z
v(br)@itest itest vc @i rsm (note 1) i r @v wm vma v a ua v min. min. max max. max. bzd27c11p 10.4 50 0.05 0.10 15.7 9.6 5 9.1 bzd27c12p 11.4 50 0.05 0.10 17 8.8 5 10 bzd27c13p 12.4 50 0.05 0.10 18.9 7.9 5 11 bzd27c15p 13.8 50 0.05 0.10 20.9 7.2 5 12 bzd27c16p 15.3 25 0.06 0.11 22.9 6.6 5 13 bzd27c18p 16.8 25 0.06 0.11 25.6 5.9 5 15 bzd27c24p 22.8 25 0.06 0.11 33.8 4.4 5 20 bzd27c27p 25.1 25 0.06 0.11 38.1 3.9 5 22 bzd27c30p 28 25 0.06 0.11 42.2 3.6 5 24 bzd27c33p 31 25 0.06 0.11 46.2 3.2 5 27 bzd27c36p 34 10 0.06 0.11 50.1 3 5 30 bzd27c39p 37 10 0.06 0.11 54.1 2.8 5 33 bzd27c43p 40 10 0.07 0.12 60.7 2.5 5 36 bzd27c47p 44 10 0.07 0.12 65.5 2.3 5 39 BZD27C51P 48 10 0.07 0.12 70.8 2.1 5 43 bzd27c62p 58 10 0.08 0.13 86.5 1.7 5 51 bzd27c68p 64 10 0.08 0.13 94.4 1.6 5 56 bzd27c75p 70 10 0.08 0.13 103.5 1.5 5 62 bzd27c100p 94 5 0.09 0.13 139 1.1 5 82 bzd27c120p 114 5 0.09 0.13 152 0.65 5 100 bzd27c180p 168 5 0.09 0.13 229 0.43 5 150 bzd27c200p 188 5 0.09 0.13 254 0.39 5 160 bzd27c220p 208 5 0.09 0.13 279 0.35 5 176 notes: 1. non-repetitive peak reverse current in accordance with "iec 60-1, section 8" (10/1000 us pulse) version:q11 reverse current@ stand-off voltage electrical characteristics (ta=25 unless otherwise noted) device alphz@itest %/ rev. breakdown voltage test current temperature coefficient clamping voltage
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